Samsung Electronics Develops World's First Next-Generation
                       Wafer Processing Technology


SEOUL, Korea - September, 14, 1998 - Samsung Electronics Co., Ltd , has
completed development of a multi-layer circuit production process that uses
Fully-Depleted-Silicon-On-Insulator (FD-SOI) elements, which involve wafer
processing technology that can create next-generation, super-fast CPUs.
FD-SOI production technology is a core technology for reducing power
consumption while improving signal transmission speed. Little additional
design modification is required when designing devices using highly complex
processing technology. A high degree of integration is possible, circuit
design is easy and FD-SOI can be applied to existing products without having
to make design changes. With SOI technology, chips can operate with a power
supply of one volt only, facilitating the production of systems that are fast,
energy-efficient and operable on low voltage. Chip size can be reduced and
production processes simplified, which translate into lower production costs.

Moreover, Samsung Electronics has developed various cutting-edge processes to
enhance speed and reduce power consumption. These include microscopic
lithography, trench isolation, 4-nanometer-thick gate oxide film,
low-resistance transistors, 4-layer and higher circuitry, and low-dielectric
thin film.

FD-SOI can be applied to existing products without new investments in
facilities. This means greater price competitiveness in the marketplace.
Process technology for 0.25-micron circuitry is used, and CPUs with operating
speeds of 1-gigahertz and higher can be produced. Chips made with FD-SOI
operate 25% faster than other chips, so this technology can be applied to
next-generation Alpha CPUs.

FD-SOI technology will also be applied to copper chips, which are scheduled
for completion next year. This technological marriage is expected to result in
chips that have 0.18-micron circuits and that operate at 1.5 gigahertz or
higher.


Terminology

Copper Chip: Transistor connectors will be made of copper instead of aluminum,
increasing signal process speed while reducing production costs.

Microscopic Lithography: A 0.25-micron krypton fluoride (KrF) laser is used to
etch circuit patterns onto the wafer surface.

Trench Isolation: Implementing electric circuits involves connecting isolated
devices through specific conducting paths. Thus, to fabricate
monolithic-silicon IC's, devices isolated from one another must be created in
the silicon substrate. A variety of techniques have been developed to isolate
devices in IC's. However, during this FD-SOI project, new trench isolation
technology was developed for minimizing residual stress of SOI devices. Here,
a trench isolation is first etched in the thin film Si on SOI, and refilled
with an insulator material. Then the surface is planarized by a mechanical and
chemical polishing process.

Low-Resistance Transistors: A great deal of Samsung know-how has gone into
transistor technology, a core part of the FD-SOI project. Samsung Electronics
developed a super-thin cobalt silicide (conductor) film process to lower
resistance of the transistor gate, source and drain. The process maximizes
transistor performance.

4-Layer (or more) Circuitry: Samsung Electronics has already secured the
capability to make 4-layer circuitry, and the company expects to have
circuitry of six layers or more by the time mass production begins. Currently,
the company is applying its 0.25-micron design rule.

Low-Dielectric Thin Film: The latest technology is applied to low-dielectric
thin film, used as insulation between circuit layers.

In Samsung Electronics Co., Ltd, there are three main business units:

- Multimedia & Home Appliances
- Semiconductors
- Information & Telecommunications

Samsung Electronics Co., Ltd, a US $13 billion (1997) flagship company of
Korean-based Samsung Group, is a world leader in electronics, with operations
in more than 60 countries and 85,000 employees worldwide.